 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NTE2390 MOSFET N-Channel Enhancement Mode, High Speed Switch Description: The NTE2390 is an N-Channel Enhancement Mode Power MOS Field Effect Transistor in a TO220 type package designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: D Silicon Gate for Fast Switching Speeds D IDSS, VDC(on), VGS(th), and SOA Specified at Elevated Temperatures. D Rugged - SOA is Power Dissipation Limited D Source-to-Drain Diode Characterized for Use With Inductive Loads Absolute Maximum Ratings: Drain-Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Drain-Gate Voltage (RGS = 1M), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Maximum Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67C/W Maximum Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 30C/W Maximum Lead Temperature (During soldering), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +275C Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Drain-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS ID = 0.25mA, VGS = 0 IDSS IGSSF IGSSR VGS(th) rDS(on) VDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ton trr Ld Measured from the contact screw on tab to center of die Measured from the drain lead 0.25" from package to center of die Internal Source Inductance Ls Measured from the source lead 0.25" from package to source bond pad IS = Rated ID, VGS = 0 VDS = 48V, VGS = 10V, ID = Rated ID VDD = 25V, ID = 0.5 Rated ID, Rgen = 50 VGS = 0, VDS = Max Rating VGS = 0, VDS = 48V, TJ = +125C Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse ON Characteristics (Note 1) Gate Threshold Voltage VDS = VGS, ID = 1mA VDS = VGS, ID = 1mA, TJ = +100C Static Drain-Source On Resistance Drain-Source ON-Voltage VGS = 10V, ID = 6A VGS = 10V, ID = 12A VGS = 10V, ID = 6A, TJ = 100C Forward Transconductance Dynamic Characteristics Input Capactiance Output Capacitance Reverse Transfer Capactiance VDS = 25V, VGS = 0, f = 1MHz - - - - - - 400 300 100 pf pf pf VDS = 15V, ID = 6A 2.0 1.5 - - - 4 - - - - 4.5 4.0 0.2 3.0 2.8 - V V V V mhos VDS = 0, VGSF = 20V VDS = 0, VGSR = 20V 60 - - - - - - - - - - 0.2 1.0 100 100 V mA mA nA nA Symbol Test Conditions Min Typ Max Unit - - Switching Characteristics (TJ = +100C, Note 1) Turn-On Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge - - - - - - - - - - - 13 6 7 60 160 80 110 26 - - ns ns ns ns nC nC nC Source Drain Diode Characteristics (Note 1) Forward ON Voltage Forward Turn-On Time Reverse Recovery Time Internal Package Inductance Internal Drain Inductance - - - 3.5 4.5 7.5 - - - nH nH nH - 1.8 3.2 V Limited by stray inductance - 300 - ns Note 1. Pulse test: Pulse width 300s, Duty cycle 2%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain/Tab |
Price & Availability of NTE2390
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |